| PART |
Description |
Maker |
| SI3458DV-E3 |
3200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
| SI3458DV-T1-E3 |
3200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
| SHP-400 |
SpecificationsHigh 50楼? 395 to 3200 MHz
SpecificationsHigh 50惟 395 to 3200 MHz
SpecificationsHigh 50Ω 395 to 3200 MHz
SpecificationsHigh 50Ω 395 to 3200 MHz
|
Mini-Circuits
|
| BHP-500 |
High Pass Filter 50楼? 500 to 3200 MHz
High Pass Filter 50Ω 500 to 3200 MHz
|
Mini-Circuits
|
| AR372 AR372S32 |
3200 V, 705 A, 6 kA rectifier diode
|
POSEICO SPA
POSEICO[Power Semiconductors]
|
| DA3200S-VOIP DA3200-E1 DA3200-T1 |
DA-3200 Data Network Analyzer
|
JDS Uniphase Corporation
|
| SGA-5386-TR2 SGA-5386-TR1 SGA-5386 |
DC-3200 MHz Silicon Germanium HBT Cascadeable Gain Block
|
Stanford Microdevices
|
| FM4032W |
SURFACE MOUNT SILICON RECTIFIER VOLTAGE 3200 Volts CURRENT 0.2 Ampere
|
Rectron Semiconductor
|
| HSDL-3200 |
HSDL-3200#001 · Infrared IrDA 1.2 Compliant 115.2Kb/s 3V Transceiver
|
Agilent (Hewlett-Packard)
|
| MSA-0486 |
0 MHz - 3200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
AGILENT TECHNOLOGIES INC
|
| 5SDA16F3206 |
Avalanche Rectifier Diode 1620 A, 3200 V, SILICON, RECTIFIER DIODE
|
ABB, Ltd.
|
